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CEN2301

CET
Part Number CEN2301
Manufacturer CET
Description P-Channel MOSFET
Published Apr 10, 2017
Detailed Description CEN2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.7A, RDS(ON) = 110mΩ @VGS = -4.5V. RDS(ON) ...
Datasheet PDF File CEN2301 PDF File

CEN2301
CEN2301

Overview
CEN2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.
7A, RDS(ON) = 110mΩ @VGS = -4.
5V.
RDS(ON) = 160mΩ @VGS = -2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead-free plating ; RoHS compliant.
SOT-23-T package.
D DS G SOT-23-T G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID -2.
7 IDM -10.
8 Maximum Power Dissipation PD 1.
25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 ...


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