BYD Microelectronics Co.
, Ltd.
BF9028DND-GE
20V N-Channel MOSFET
General Description
The BF9028DND-GE is a dual N-channel MOS Field Effect
Transistor, which is applied to electronic systems as a power switch.
This device has ESD-protection and low resistance characteristics.
Features
z VDS=24 V z ID=6 A z Low on-state resistance
RDS (on) 19.
5 mΩ (VGS=4.
5V) RDS (on) 20 mΩ (VGS=3.
8V) RDS (on) 26 mΩ (VGS=3.
0V) RDS (on) 30 mΩ (VGS=2.
5V)
Absolute Maximum Ratings(TC = 25℃)
Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage PD Power Dissipation TC = 25°C
TJ,Tstg Operating and Storage Temperature Range
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