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BF9028DND-GE

BYD
Part Number BF9028DND-GE
Manufacturer BYD
Description N-Channel MOSFET
Published Apr 12, 2017
Detailed Description BYD Microelectronics Co., Ltd. BF9028DND-GE 20V N-Channel MOSFET General Description The BF9028DND-GE is a dual N-chan...
Datasheet PDF File BF9028DND-GE PDF File

BF9028DND-GE
BF9028DND-GE

Overview
BYD Microelectronics Co.
, Ltd.
BF9028DND-GE 20V N-Channel MOSFET General Description The BF9028DND-GE is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch.
This device has ESD-protection and low resistance characteristics.
Features z VDS=24 V z ID=6 A z Low on-state resistance RDS (on) < 19.
5 mΩ (VGS=4.
5V) RDS (on) < 20 mΩ (VGS=3.
8V) RDS (on) < 26 mΩ (VGS=3.
0V) RDS (on) < 30 mΩ (VGS=2.
5V) Absolute Maximum Ratings(TC = 25℃) Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage PD Power Dissipation TC = 25°C TJ,Tstg Operating and Storage Temperature Range (Note a) Value 24 6 24 ±10 2.
0 -55 to +150 Unit V A A V W ℃ Ordering Information Part Number BF9028DND-GE Package DFN2*5-6L Packaging Tape&Reel Datasheet TS-MOS-PD-0009 Rev.
A/1 Page 1 of 8 BYD Microelectronics Co.
, Ltd.
BF9028DND-GE Electrical Characteristics (Tc = ...


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