HIGH VOLTAGE N-Channel MOSFET      WFP8 N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Extended Safe Operating Area  □ Unrivalled Gate Charge :Qg= 40nC (Typ.
) □ BVDSS=600V,ID=7.
5A □ RDS(on) :1.
32 Ω (Max) @VG=10V □ 100% Avalanche Tested   GDS D ! ● ◀▲ G! ● ●   ! S TO‐220    G‐Gate,D‐Drain,S‐Sourse  Absolute Maximum Ratings Tc=25℃ unless other wise noted Symbol VDSS ID VGS EAS IAR PD TJ,TSTG TL Parameter Drain-Sourse Voltage Drain Current -continuous (Tc=25℃) -continuous (Tc=100℃) Gate-Sourse Voltage Single Plused Avanche Energy (Note1) Avalanche Current (Note2) Power Dissipation (Tc=25℃) Operating and Storage Te...

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