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WFP8N60B

Winsemi
Part Number WFP8N60B
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Mar 21, 2017
Detailed Description WFP8N60B Product Description Silicon N-Channel MOSFET Features � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate ch...
Datasheet PDF File WFP8N60B PDF File

WFP8N60B
WFP8N60B

Overview
WFP8N60B Product Description Silicon N-Channel MOSFET Features � 7.
5A,600V,RDS(on)(Max1.
2Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.
this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially wellsuited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
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