Part Number
|
TSB8N65M |
Manufacturer
|
Truesemi |
Description
|
N-Channel MOSFET |
Published
|
Apr 12, 2017 |
Detailed Description
|
TSB8N65M / TSI8N65M
650V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced p...
|
Datasheet
|
TSB8N65M
|
Overview
TSB8N65M / TSI8N65M
650V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
• 7.
5A, 650V, RDS(on) = 1.
60 @VGS = 10 V • Low gate charge ( typical 29nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability
D D
D2-PAK GS
GDS
I2-PAK
G S
Ab...
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