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TSB8N60M

Part Number	TSB8N60M
Manufacturer	Truesemi
Description	N-Channel MOSFET
Published	Apr 12, 2017
Detailed Description	TSB8N60M / TSI8N60M TSB8N60M / TSI8N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using ...
Datasheet	TSB8N60M PDF File

Overview

TSB8N60M / TSI8N60M TSB8N60M / TSI8N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
.
D Features - 7.
5A, 600V, RDS(on) = 1.
2Ω@VGS = 10 V - Low gate charge ( typical 29nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D2-PAK GS ...

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