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Part Number
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TSD1N60M |
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Manufacturer
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Truesemi |
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Description
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N-Channel MOSFET |
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Published
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Apr 13, 2017 |
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Detailed Description
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TSD1N60M/TSU1N60M
TSD1N60M/TSU1N60M
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using True...
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Datasheet
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TSD1N60M
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Overview
TSD1N60M/TSU1N60M
TSD1N60M/TSU1N60M
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
• 1.
0A,600V,Max.
RDS(on)=11.
5 Ω @ VGS =10V • Low gate charge(typical 5.
2nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability
Absolute Maximum Rat...
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