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TSD1N60M

Truesemi
Part Number TSD1N60M
Manufacturer Truesemi
Description N-Channel MOSFET
Published Apr 13, 2017
Detailed Description TSD1N60M/TSU1N60M TSD1N60M/TSU1N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using True...
Datasheet PDF File TSD1N60M PDF File

TSD1N60M
TSD1N60M

Overview
TSD1N60M/TSU1N60M TSD1N60M/TSU1N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features • 1.
0A,600V,Max.
RDS(on)=11.
5 Ω @ VGS =10V • Low gate charge(typical 5.
2nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Rat...


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