SSM28G45EM

SSM28G45EM N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR High input impedance High peak current capability 3.3V gate drive C C C C SO-8 G E E E Absolute Maximum Ratings Symbol Parameter VCE Collector-Emitter Voltage VGE Gate-Emitter Voltage VGEP Pulsed Gate-Emitter Voltage ICP PD @ TC=25°C1 Pulsed Collector Current Maximum Power Dissipation TSTG ...