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SSM28G45EM

Silicon Standard
Part Number SSM28G45EM
Manufacturer Silicon Standard
Description N-channel Insulated-Gate Bipolar Transistor
Published Apr 13, 2017
Detailed Description SSM28G45EM N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR High input impedance High peak current capability 3.3V gate driv...
Datasheet PDF File SSM28G45EM PDF File

SSM28G45EM
SSM28G45EM

Overview
SSM28G45EM N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR High input impedance High peak current capability 3.
3V gate drive C C C C SO-8 G E E E Absolute Maximum Ratings Symbol Parameter VCE Collector-Emitter Voltage VGE Gate-Emitter Voltage VGEP Pulsed Gate-Emitter Voltage ICP PD @ TC=25°C1 Pulsed Collector Current Maximum Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range VCE ICP G Rating 450 ±6 ±8 130 2.
5 -55 to 150 -55 to 150 450V 130A C E Units V V V A W °C °C Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units IGES Gate-Emitter Leakage Current VGE=± 6V, VCE=0V - - 10 µA ICES Collector-Emitter Leakage Current (Tj=25°C) VCE=450V, VGE=0V - - 10 µA VCE(sat) Collector-Emitter Saturation Voltage VGE=3.
3V, ICP=130A (Pulsed) - 3.
8 6 V VGE(th) Gate Threshold Voltage VCE=VGE, IC=250µA - -1V Qg Total Gate Charge IC=40A - 74 120 nC Qge Gat...


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