Part Number
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SSM9922EO |
Manufacturer
|
Silicon Standard |
Description
|
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS |
Published
|
Apr 13, 2017 |
Detailed Description
|
SSM9922(G)EO
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Low on-resistance Capable of 2.5V gate drive Ideal for DC/DC...
|
Datasheet
|
SSM9922EO
|
Overview
SSM9922(G)EO
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Low on-resistance Capable of 2.
5V gate drive Ideal for DC/DC battery applications
Description
G2 S2 S2 D2
TSSOP-8
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G1
S1 S1 D1
BV DSS RDS(ON) ID
20V 15mΩ 6.
8A
D1 D2 G1 G2
S1 S2
This device is available with Pb-free lead finish (second-level interconnect) as SSM9922GEO.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage Drain Current3, VG S @ 4.
5V Drain ...
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