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SSM9922EO

Silicon Standard
Part Number SSM9922EO
Manufacturer Silicon Standard
Description DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Published Apr 13, 2017
Detailed Description SSM9922(G)EO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive Ideal for DC/DC...
Datasheet PDF File SSM9922EO PDF File

SSM9922EO
SSM9922EO

Overview
SSM9922(G)EO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.
5V gate drive Ideal for DC/DC battery applications Description G2 S2 S2 D2 TSSOP-8 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G1 S1 S1 D1 BV DSS RDS(ON) ID 20V 15mΩ 6.
8A D1 D2 G1 G2 S1 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM9922GEO.
Absolute Maximum Ratings Symbol Parameter Rating Units VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Drain Current3, VG S @ 4.
5V Drain Current3, VGS @ 4.
5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor 20 ±12 6.
8 5.
4 25 1 0.
008 V V A A A W W/°C TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 °C °C Thermal Data Symbol Rthj-a Parameter Thermal Resis...


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