Part Number
|
HFU2N65U |
Manufacturer
|
SemiHow |
Description
|
N-Channel MOSFET |
Published
|
Apr 14, 2017 |
Detailed Description
|
HFD2N65U_HFU2N65U
HFD2N65U / HFU2N65U
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugg...
|
Datasheet
|
HFU2N65U
|
Overview
HFD2N65U_HFU2N65U
HFD2N65U / HFU2N65U
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.
5 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 5 ȍ7\S#9GS=10V 100% Avalanche Tested
May 2014
BVDSS = 650 V RDS(on) typ = 5 ȍ ID = 1.
8 A
D-PAK I-PAK
2
1 3
HFD2N65U
1 2 3
HFU2N65U
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC...
Similar Datasheet