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HFU2N65

SemiHow
Part Number HFU2N65
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFU2N65 Nov 2008 HFU2N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 4.5 Ω ID = 1.6 A FEATURES  Originative N...
Datasheet PDF File HFU2N65 PDF File

HFU2N65
HFU2N65

Overview
HFU2N65 Nov 2008 HFU2N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 4.
5 Ω ID = 1.
6 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 9.
0 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 4.
5 Ω (Typ.
) @VGS=10V  100% Avalanche Tested I-PAK 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) G...


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