N‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.
)
11.
5mΩ
ID 25A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB12N03HR
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
25 20 100
Avalanche Current
IAS 30
Avalanche Energy Repetitive Avalanche Energy2
L = 0.
1mH, ID=30A, RG=25Ω
L = 0.
05mH
EAS EAR
45 22.
5
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature R...