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EMB12N03V

Part Number	EMB12N03V
Manufacturer	Excelliance MOS
Description	MOSFET
Published	Apr 26, 2017
Detailed Description	N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 11...
Datasheet	EMB12N03V PDF File

Overview

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.
) 11.
5mΩ ID 18.
5A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.
1mH, ID=12A, RG=25Ω Repetitive Avalanche Energy2 L = 0.
05mH Power Dissipation TC = 25 °C TC = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD PD T...

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