P‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.
)(VGS=‐10V) 10mΩ
ID
‐13A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB12P03G
LIMITS
UNIT
Gate‐Source Voltage
VGS ±25
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 100 °C
ID IDM
‐13 ‐10 ‐50
Avalanche Current
IAS ‐15
Avalanche Energy Repetitive Avalanche Energy2
L = 0.
1mH, ID=‐15A, RG=25Ω L = 0.
05mH
EAS EAR
11.
25 5.
62
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Stora...