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EMB12P04F

Part Number	EMB12P04F
Manufacturer	Excelliance MOS
Description	MOSFET
Published	Apr 26, 2017
Detailed Description	P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐40V D RDSON (MAX.) ...
Datasheet	EMB12P04F PDF File

Overview

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐40V D RDSON (MAX.
) 12.
6mΩ ID ‐25A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.
1mH, ID=‐25A, RG=25Ω L = 0.
05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL VGS ID IDM IAS ...

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