N‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.
)
2.
5mΩ
ID
100A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB02N03HS
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current1 Pulsed Drain Current2
TC = 25 °C TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.
1mH, ID=64A, RG=25Ω
Repetitive Avalanche Energy3
L = 0.
05mH
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS EAR PD
Tj, Tstg
±20 100 67 ...