EMB03P03H
P‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
D
BVDSS
‐30V
RDSON (MAX.
)
3.
1mΩ
ID
‐85A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate‐Source Voltage
VGS
±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C
‐85
ID
TC = 100 °C
‐65
IDM
‐260
Avalanche Current
IAS
‐80
Avalanche Energy
L = 0.
1mH, ID=‐80A, RG=25Ω
EAS
320
Repetitive Avalanche Energy2
L = 0.
05mH
EAR
160
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
69 27 ‐55 to 150
100...