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EMB03P03H

Excelliance MOS
Part Number EMB03P03H
Manufacturer Excelliance MOS
Description MOSFET
Published Apr 27, 2017
Detailed Description EMB03P03H P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX....
Datasheet PDF File EMB03P03H PDF File

EMB03P03H
EMB03P03H

Overview
EMB03P03H P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.
) 3.
1mΩ ID ‐85A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ‐85 ID TC = 100 °C ‐65 IDM ‐260 Avalanche Current IAS ‐80 Avalanche Energy L = 0.
1mH, ID=‐80A, RG=25Ω EAS 320 Repetitive Avalanche Energy2 L = 0.
05mH EAR 160 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 69 27 ‐55 to 150 100...


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