WNMD2155
WNMD2155
Dual N-Channel, 20V, 7.
9A, Power MOSFET
Http//:www.
willsemi.
com
VDS (V)
Rds(on) (ȍ)
0.
018@ VGS=10V
0.
020@ VGS=4.
5V 20
0.
025@ VGS=2.
5V
0.
031@ VGS=1.
8V
Descriptions
The WNMD2155 is N-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2155 is Pb-free.
SOP-8L
D1 D1 D2 8 76
D2 5
Features
z Trench Technology
1 234 S1 G1 S2 G2
Pin configuration (Top view)
8 7 65
z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Thresho...