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WNMD2162A

Will Semiconductor
Part Number WNMD2162A
Manufacturer Will Semiconductor
Description Dual N-Channel MOSFET
Published Apr 30, 2017
Detailed Description WNMD2162A Dual N-Channel, 20V, 4.8A, Power MOSFET VDS (V) 20 ESD Protected Descriptions Rds(on) (Ω) 0.014@ VGS=4.5V 0...
Datasheet PDF File WNMD2162A PDF File

WNMD2162A
WNMD2162A

Overview
WNMD2162A Dual N-Channel, 20V, 4.
8A, Power MOSFET VDS (V) 20 ESD Protected Descriptions Rds(on) (Ω) 0.
014@ VGS=4.
5V 0.
015@ VGS=3.
1V 0.
016@ VGS=2.
5V The WNMD2162A is Dual N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2162A is Pb-free and Halogen-free.
Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package PDFN2.
9×2.
8-8L WNMD2162A Http://www.
sh-willsemi.
com PDFN2.
9×2.
8-8L D2 D2 ...


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