WNMD2157
Dual N-Channel, 20V, 5.
4A, Power MOSFET
VDS (V) 20
Rds(on) (ȍ) 0.
019@ VGS=4.
5V 0.
024@ VGS=2.
5V 0.
034@ VGS=1.
8V
WNMD2157
Http//:www.
willsemi.
com
Descriptions
Package
The WNMD2157 is N-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2157 is Pb-free and Halogen-free.
Features
G1 D1/D2 65
G2 4
1 23 S1 D1/D2 S2
Pin configuration (Top view)
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z ...