WNMD2158
Dual N-Channel, 20V, 7.
0A, Power MOSFET
VDS (V)
Rds(on) (ȍ)
0.
0148@ VGS=4.
5V
0.
017@ VGS=3.
1V
20
0.
019@ VGS=2.
5V
ESD Rating: 2000V HBM
WNMD2158
www.
sh-willsemi.
com
Descriptions
TSSOP-8L
D1/D2 S2 S2 G2
8765
The WNMD2158 is N-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2158 is Pb-free.
Features
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package TSSOP-8L
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