WNMD2168
Dual N-Channel, 20V, 4.
1A, Power MOSFET
VDS (V) 20
Rds(on) (Ω) 0.
022@ VGS=4.
5V 0.
024@ VGS=3.
1V 0.
027@ VGS=2.
5V
Descriptions
The WNMD2168 is N-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2168 is Pb-free.
WNMD2168
Http//:www.
willsemi.
com
TSSOP-8L
D1/D2 S2 S2 G2
8765
Features
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package TSSOP-8L
1234
D1/D2 S1 S1 G1
Pin configuration (T...