WNMD2166
Dual N-Channel, 20V, 4.
0A, Power MOSFET
VDS (V) 20
Rds(on) (Ω) 0.
022@ VGS=4.
5V 0.
024@ VGS=3.
1V 0.
027@ VGS=2.
5V
ID (A) 4.
0 2.
5 2.
0
WNMD2166
Http//:www.
willsemi.
com
Descriptions
The WNMD2166 is N-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2166 is Pb-free.
Features
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23-6L
Applications
Driver for Relay, Solenoid, Motor, ...