WNMD2182
WNMD2182
Dual N-Channel, 20V, 9.
5A, Power MOSFET
Http//:www.
sh-willsemi.
com
VDS (V)
Rds(on) (mΩ)
12@ VGS=4.
5V
20 14@ VGS=3.
1V
17@ VGS=2.
5V
ESD HBM 2000V
PDFN2.
9×2.
8-8L
Descriptions
The WNMD2182 is Dual N-Channel enhancement MOS Field Effect
Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNMD2182 is Pb-free and Halogen-free.
D2 D2 D1 D1 8 7 65
1
23
4
S2 G2 S1 G1
Features
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage ...