|
Part Number
|
MMBD352WT1G |
|
Manufacturer
|
ON Semiconductor |
|
Description
|
Dual Schottky Barrier Diode |
|
Published
|
May 1, 2017 |
|
Datasheet
|
MMBD352WT1G
|
Features
Very Low Capacitance − Less Than 1.0 pF @ 0 V Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
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