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MMBD352WT1

Part Number	MMBD352WT1
Manufacturer	Motorola
Description	Dual Schottky Barrier Diode
Published	Apr 10, 2007
Detailed Description	MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352WT1/D Dual Schottky Barrier ...
Datasheet	MMBD352WT1 PDF File

Overview

MOTOROLA www.
DataSheet4U.
com SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352WT1/D Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits.
• Very Low Capacitance — Less Than 1.
0 pF @ Zero Volts • Low Forward Voltage — 0.
5 Volts (Typ) @ IF = 10 mA MMBD352WT1 3 1 2 1 ANODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Symbol VR Value 7.
0 Unit VCC 3 CATHODE/ANODE 2 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrat...

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