MPSW51, MPSW51A
One Watt High Current
Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
VCEO
Vdc
MPSW51
−30
MPSW51A
−40
Collector −Base Voltage
MPSW51 VCBO −40 Vdc
MPSW51A
−50
Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
VEBO IC PD
−5.
0 −1000
1.
0 8.
0
Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C PD 2.
5 W
Derate above 25°C
20 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
125 °C...