N-Channel Enhancement Mode MOSFET
STN8205A
■DESCRIPTION
20V N-Channel Enhancement Mode MOSFET
■FEATURE
The STN8205A is the Dual N-Channel logic enhancement mode power field effect
transistor which is produced using high cell density.
advanced trench technology to provide excellent RDS(ON).
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , and low in-line power loss are needed in a very small outline surface mount package.
30V/6.
0A, RDS(ON) =21mΩ(typ.
)@VGS =4.
5V 30V/5.
2A, RDS(ON) =25mΩ(typ.
)@VGS =2.
5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistanc...