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Part Number
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STB13N60M2 |
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Manufacturer
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STMicroelectronics |
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Description
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N-channel MOSFET |
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Published
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Jun 9, 2017 |
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Detailed Description
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STB13N60M2
Datasheet
N-channel 600 V, 350 mΩ typ., 11 A MDmesh M2 Power MOSFET in a D²PAK package
TAB 2 3 1
D²PAK
D(2, ...
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Datasheet
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STB13N60M2
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Overview
STB13N60M2
Datasheet
N-channel 600 V, 350 mΩ typ.
, 11 A MDmesh M2 Power MOSFET in a D²PAK package
TAB 2 3 1
D²PAK
D(2, TAB)
Features
Order code
VDS at TJ max.
RDS(on) max.
ID
STB13N60M2
650 V
380 mΩ
11 A
• Extremely low gate charge
•
Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
G(1)
Description
This device is an N-channel Power MOSFET developed using MDmesh M2
S(3)
technology.
Thanks to its strip layout and an improved vertical structure, the device
AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it
suitable for the most demanding high efficiency co...
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