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STB13N60M2

STMicroelectronics
Part Number STB13N60M2
Manufacturer STMicroelectronics
Description N-channel MOSFET
Published Jun 9, 2017
Detailed Description STB13N60M2 Datasheet N-channel 600 V, 350 mΩ typ., 11 A MDmesh M2 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, ...
Datasheet PDF File STB13N60M2 PDF File

STB13N60M2
STB13N60M2

Overview
STB13N60M2 Datasheet N-channel 600 V, 350 mΩ typ.
, 11 A MDmesh M2 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) Features Order code VDS at TJ max.
RDS(on) max.
ID STB13N60M2 650 V 380 mΩ 11 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology.
Thanks to its strip layout and an improved vertical structure, the device AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Product status link STB13N60M2 Product summary Order code STB13N60M2 Marking 13N60M2 Package D²PAK Packing Tape and reel DS14361 - Rev 1 - June 2023 For further information contact your local STMicroelectronics sales office.
www.
st.
com STB13N60M2 Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
Pulse width is limited by safe operating area.
2.
ISD ≤ 11 A, di/dt ≤ 400 A/μs, VDS (peak) < V(BR)DSS, VDD = 400 V.
3.
VDS ≤ 480 V.
Table 2.
Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA(1) Thermal resistance, junction-to-ambient 1.
When mounted on 1 inch2 FR-4, 2 Oz copper board.
Symbol IAR EAS Table 3.
Avalanche characteristics Parameter Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max.
) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) Value ±25 11 7 44 110 15 50 -55 to 150 Unit...


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