2N3469

2N3460 : MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation T/^ = 25°C Derate above 25°C Storage Temperature Range Symbol VDG . v GS lG PD Tstg Value 50 50 10 300 1.7 -65 to +175 Unit Vdc Vdc mA mW mW/°C °C 2N3458 2N3459 2N3460 CASE 22-03, STYLE 4 TO-18 (TO-206AA) JFET LOW-FREQUENCY/ LOW NOISE —N-CHANNEL DEPLETION ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (lG = 1.0 /iA) Gate Reverse Current (VGS = -30 V) Gate Source Cutoff Voltage (V D s = D20, l = 1.0 nA.) ON CHARACTERISTICS 2N3458 2N3459 2N3460 Zero-Gate-Voltage Drain (V D s = 20 Volts) 2N3458 2N3459 2N3.

2N3460 : The -50V InterFET 2N3458, 2N3459, and 2N3460 are targeted for sensitive amplifier stages for midfrequencies designs. Gate leakages are typically less than 10pA at room temperatures. The 2N3460 has a cutoff voltage of less than 1.8V ideal for low-level power supplies. The TO-18 package is hermetically sealed and suitable for military applications. Gate/Case Drain 2 Source TO-18 Bottom View 3 1 Source 1 Drain 2 SOT23 Top View 3 Gate Gate 3 Drain 2 Source 1 TO-92 Bottom View Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance 2N3458 Min -50 3 -7.8 (Max) 2.5 2N3459 M.

2N3460 : 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

2N3467 : Data Sheet No. 2N3467 Type 2N3467 Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-39 case. Also available in chip form using the 6706 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/348 which Semicoa meets in all cases. Generic Part Number: 2N3467 REF: MIL-PRF-19500/348 TO-39 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC TJ TSTG Rating 40 40 5.0 1.0 -55 to +175 -55 to +175 .

2N3467 : 2N3467 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) 1 – Emitter TO39 (TO205AD) PINOUTS 2 – Base 3 – Collector Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. VCEO = 40V IC = 1A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 1/0.5 (VCE / IC) * Maximum Working Voltage Min. .

2N3467 : The CENTRAL SEMICONDUCTOR 2N3467 and 2N3468 are silicon PNP switching transistors designed for core driver applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC 2N3467 40 2N3468 50 40 50 5.0 1.0 1.0 5.0 -65 to +200 175 35 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3467 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=30V - 100 ICBO VCB=30V, TA=100°C - 15 ICEV VCE=.

2N3467 : MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N3467 2N3468 v CEO VCBO 40 40 50 50 VEBO 5.0 ic 1.0 PD 1.0 5.71 Pd TJ- Tstg 5.0 28.6 - 65 to + 200 Unit Vdc Vdc Vdc Adc Watt mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol Rwc RftJA Max 35 0.175 Unit °C/W X/mW 2N3467 2N3468 JAN, JTX, JTXV AVAILABLE CASE 079-02, STYLE 1 TO-39 (TO-205AD) SWITCHING TRA.

2N3467 : TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/348 Devices 2N3467 2N3467L 2N3468 2N3468L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N3467 2N3467L 40 40 2N3468 2N3468L 50 50 Unit Vdc Vdc Vdc Adc W W 0 C www.DataSheet4U.com @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temperature Range 1) Derate linearly 5.71 mW/0C for TA +250C 2) Derate linearly 28.6 mW/0C for TC +250C 5.0 1.0 1.0 5.0 -55 to +175 TO-39* (TO-205AD) 2N3467, 2N3468 TO-5* 2N3467L, 2N3468L *See appendix A for p.

2N3467L : Data Sheet No. 2N3467L Type 2N3467L Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-5 case. Also available in chip form using the 6706 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/348 which Semicoa meets in all cases. Generic Part Number: 2N3467 REF: MIL-PRF-19500/348 TO-5 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC TJ TSTG Rating 40 40 5.0 1.0 -55 to +175 -55 to +175 .

2N3467L : TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/348 Devices 2N3467 2N3467L 2N3468 2N3468L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N3467 2N3467L 40 40 2N3468 2N3468L 50 50 Unit Vdc Vdc Vdc Adc W W 0 C www.DataSheet4U.com @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temperature Range 1) Derate linearly 5.71 mW/0C for TA +250C 2) Derate linearly 28.6 mW/0C for TC +250C 5.0 1.0 1.0 5.0 -55 to +175 TO-39* (TO-205AD) 2N3467, 2N3468 TO-5* 2N3467L, 2N3468L *See appendix A for p.

2N3468 : Data Sheet No. 2N3468 Type 2N3468 Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-39 case. Also available in chip form using the 6706 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/348 which Semicoa meets in all cases. Generic Part Number: 2N3468 REF: MIL-PRF-19500/348 TO-39 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC TJ TSTG Rating 50 50 5.0 1.0 -55 to +175 -55 to +175 .

2N3468 : 2N3468 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) 1 – Emitter TO39 (TO205AD) PINOUTS 2 – Base 3 – Collector Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. VCEO = 50V IC = 1A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 1.0/0.5 (VCE / IC) * Maximum Working Voltage Min.

2N3468 : .

2N3468 : The CENTRAL SEMICONDUCTOR 2N3467 and 2N3468 are silicon PNP switching transistors designed for core driver applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC 2N3467 40 2N3468 50 40 50 5.0 1.0 1.0 5.0 -65 to +200 175 35 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3467 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=30V - 100 ICBO VCB=30V, TA=100°C - 15 ICEV VCE=.

2N3468 : MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N3467 2N3468 v CEO VCBO 40 40 50 50 VEBO 5.0 ic 1.0 PD 1.0 5.71 Pd TJ- Tstg 5.0 28.6 - 65 to + 200 Unit Vdc Vdc Vdc Adc Watt mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol Rwc RftJA Max 35 0.175 Unit °C/W X/mW 2N3467 2N3468 JAN, JTX, JTXV AVAILABLE CASE 079-02, STYLE 1 TO-39 (TO-205AD) SWITCHING TRA.

2N3468 : TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/348 Devices 2N3467 2N3467L 2N3468 2N3468L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N3467 2N3467L 40 40 2N3468 2N3468L 50 50 Unit Vdc Vdc Vdc Adc W W 0 C www.DataSheet4U.com @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temperature Range 1) Derate linearly 5.71 mW/0C for TA +250C 2) Derate linearly 28.6 mW/0C for TC +250C 5.0 1.0 1.0 5.0 -55 to +175 TO-39* (TO-205AD) 2N3467, 2N3468 TO-5* 2N3467L, 2N3468L *See appendix A for p.

2N3468L : Data Sheet No. 2N3468L Type 2N3468L Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-5 case. Also available in chip form using the 6706 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/348 which Semicoa meets in all cases. Generic Part Number: 2N3468 REF: MIL-PRF-19500/348 TO-5 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC TJ TSTG Rating 50 50 5.0 1.0 -55 to +175 -55 to +175 .