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2N3467L

Microsemi Corporation
Part Number 2N3467L
Manufacturer Microsemi Corporation
Description (2N3467L / 2N3468L) PNP SILICON SWITCHING TRANSISTOR
Published Jun 4, 2007
Detailed Description TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/348 Devices 2N3467 2N3467L 2N3468 2N3468L Qu...
Datasheet PDF File 2N3467L PDF File

2N3467L
2N3467L

Overview
TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/348 Devices 2N3467 2N3467L 2N3468 2N3468L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N3467 2N3467L 40 40 2N3468 2N3468L 50 50 Unit Vdc Vdc Vdc Adc W W 0 C www.
DataSheet4U.
com @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temperature Range 1) Derate linearly 5.
71 mW/0C for TA > +250C 2) Derate linearly 28.
6 mW/0C for TC > +250C 5.
0 1.
0 1.
0 5.
0 -55 to +175 TO-39* (TO-205AD) 2N3467, 2N3468 TO-5* 2N3467L, 2N3468L *See appendix A for package outline ELECTRICAL CHARACTERISTICS Characteristics Symbol Min.
Max.
Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 10 mAdc Emitter-Base Breakdown Current IE = 10 µAdc Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 30 Vdc Collector-Emitter Cutoff Current VEB = 3.
0 Vdc, VCE = 30 2N3467, L 2N3468, L V(BR)CBO V(BR)EBO 2N3467, L 2N3468, L V(BR)CEO ICBO ICEX 40 50 5.
0 40 50 100 100 Vdc Vdc Vdc ηAdc nAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3467, L, 2N3468, L, JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min.
Max.
Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC =150 mAdc, VCE = 1.
0 Vdc 2N3467, L 2N3468, L 2N3467, L 2N3468, L 2N3467, L 2N3468, L VCE(sat) hFE 40 25 40 25 40 25 0.
35 0.
6 1.
2 1.
0 1.
2 1.
6 Vdc 120 75 IC = 500 mAdc, VCE = 1.
0 Vdc IC = 1.
0 Adc, VCE = 5.
0 Vdc Collector-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc IC = 1.
0 Adc, IB = 100 mAdc Base-Emitter Saturation Voltage IC = 150 mAdc, IB = 15 mAdc IC = 500 mAdc, IB = 50 mAdc IC = 1.
0 Adc, IB = 100 mAdc VBE(sat) 0.
8 Vdc DYNAMIC CHARACTERISTICS Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.
0 MHz Ex...


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