® ISO 9001 Registered
Process C1004
CMOS 1.
0µ m 5 Volt Digital
Electrical Characteristics
N-Channel
Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Symbol VTN γN βN LeffN ∆WN BVDSSN VTFP(N) Minimum 0.
55 74 0.
60 7 10 Typical 0.
75 0.
60 87 0.
75 0.
8
T=25oC Unless otherwise noted Maximum Unit Comments 0.
95 V 100x1.
0µm V1/2 100x1.
0µm 100 µA/V2 100x100µm 0.
90 µm 100x1.
0µm µm Per side V V
P-Channel
Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage
Symbol VTP γP βP LeffP ∆WP BVDSSP VTFP(P)
Minimum...