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C1004

IMP Inc
Part Number C1004
Manufacturer IMP Inc
Description Process C1004
Published Mar 23, 2005
Detailed Description ® ISO 9001 Registered Process C1004 CMOS 1.0µ m 5 Volt Digital Electrical Characteristics N-Channel Transistor Threshol...
Datasheet PDF File C1004 PDF File

C1004
C1004

Overview
® ISO 9001 Registered Process C1004 CMOS 1.
0µ m 5 Volt Digital Electrical Characteristics N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Symbol VTN γN βN LeffN ∆WN BVDSSN VTFP(N) Minimum 0.
55 74 0.
60 7 10 Typical 0.
75 0.
60 87 0.
75 0.
8 T=25oC Unless otherwise noted Maximum Unit Comments 0.
95 V 100x1.
0µm V1/2 100x1.
0µm 100 µA/V2 100x100µm 0.
90 µm 100x1.
0µm µm Per side V V P-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTP γP βP LeffP ∆WP BVDSSP VTFP(P) Minimum –0.
85 24 0.
83 –7 –10 Typical –1.
0 0.
4 28 0.
98 0.
85 Maximum –1.
15 32 1.
13 Unit V V1/2 µA/V2 µm µm V V Comments 100x1.
0µm 100x1.
0µm 100x100µm 100x1.
0µm Per side Diffusion & Thin Films Well (field) Sheet Resistance N+ Sheet Resistance N+ Junction Depth P+ Sheet Resistance P+ Junction Depth Gate Oxide Thickness Field Oxide Thickness Poly Sheet Resistance Metal-1 Sheet Resistance Metal-2 Sheet Resistance Passivation Thickness Symbol ρN-well(f) ρN+ xjN+ ρP+ xjP+ TGOX TFIELD ρPOLY ρM1 ρM2 TPASS Minimum 0.
8 20 60 15 Typical 1.
0 35 0.
45 80 0.
5 20 700 22 50 30 200+900 Maximum 1.
22 50 100 30 Unit KΩ/ Ω/ µm Ω/ µm nm nm Ω/ mΩ/ mΩ/ nm Comments n-well oxide+nit.
Capacitance Gate Oxide Metal-1 to Poly1 Metal-1 to SIlicon Metal-2 to Metal-1 Symbol Cox CM1P CMIS CMM Minimum 1.
52 Typical 1.
64 0.
046 0.
028 0.
038 Maximum 1.
82 Unit fF/µm2 fF/µm2 fF/µm2 fF/µm2 Comments © IMP, Inc.
17 Process C1004 Physical Characteristics Starting Material Starting Mat.
Resistivity Typ.
Operating Voltage Well Type Metal Layers Poly Layers Contact Size Via Size Metal-1 Width/Space Metal-2 Width/Space Gate Poly Width/Space P <100> 7-8.
5 Ω-cm 5V N-well 2 1 1.
2x1.
2µm 1.
2x1.
2µm 1.
4 / 1.
2µm 2.
0 / 1.
4µm 1.
0 / 1.
4µm N+/P+ Width/Space N+ To P+ Space Contact To Poly Space Contact Overlap Of Diffusion Cont...


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