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2N2222


Part Number 2N2222
Manufacturer SEMTECH
Title NPN Silicon Transistor
Description 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group ...
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2N222 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by P2N2222A/D Amplifier Transistors NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER P2N2222A MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 75 6.0 600 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient The.

2N2220 : 2N2220/2N2221/2N2222 300/600mA, Ultra-Fast Transient Response LDO Regulator 2N2220,2N2221,and 2N2222 are epitaxial NPN silicon planar transistors in TO 18 case (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable for use as high-speed switches. Type 2N2220 2N2221 2N2222 Ordering code Q68000-A4573 Q62702-F134 Q62702-F135 Maximum ratings Collector-emitter Voltage Collector-base voltage Emitter-base voltage Collector current Junction temperature Storage temperature range Total power dissipation (Tamb =25 Total Power dissipation (Tcase=25 Thermal resistance Junction to ambient air Junction to case ) ) VCEO VCBO VEBO Ic Tj Tstg .

2N2220 : .

2N2221 : 2N2220/2N2221/2N2222 300/600mA, Ultra-Fast Transient Response LDO Regulator 2N2220,2N2221,and 2N2222 are epitaxial NPN silicon planar transistors in TO 18 case (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable for use as high-speed switches. Type 2N2220 2N2221 2N2222 Ordering code Q68000-A4573 Q62702-F134 Q62702-F135 Maximum ratings Collector-emitter Voltage Collector-base voltage Emitter-base voltage Collector current Junction temperature Storage temperature range Total power dissipation (Tamb =25 Total Power dissipation (Tcase=25 Thermal resistance Junction to ambient air Junction to case ) ) VCEO VCBO VEBO Ic Tj Tstg .

2N2221 : 2N2218I A, 2N2219I A 2N2221 I A{sILiCON) 2N2222,A, 2N5581 , 2N5582 NPN SILICON ANNULAR HERMETIC TRANSISTORS . . . widely used "Industry Standard" transistors for applications as medium-speed switches and as amplifiers from audio to VHF frequencies. • DC Current Gain Specified - 1.0 to 500 mAdc • Low Collector-Emitter Saturation Voltage - VCE(sat) @ IC = 500 mAdc = 1.6 Vdc (Max) - Non-A Suffix = 1.0 Vdc (Max) - A-Suffix • High Current-Gain-Bandwidth Product - fT = 250 MHz (Min) @ IC = 20 mAdc - All Types Except = 300 MHz (Min) @ IC = 20 mAdc - 2N2219A, 2N2222A, 2N5582 • Complements to PNP 2N2904,A thru 2N2907,A • JAN/JANTX Available for all devices NPN SILICON SWITCHING AND AMPLIFIER TRANSI.

2N2221 : SYMBOL 2N2221, 22 VCEO Collector Emitter Voltage 30 VCBO Collector Base Voltage 60 Emitter Base Voltage Collector Current Continuous Power Dissipation @Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range VEBO IC PD PD Tj, Tstg 5 800 500 2.28 1.2 6.85 -65 to +200 UNIT V V V mA mW mW/ºC W mW/ºC ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Leakage Current BVCEO BVCBO BVEBOf ICBO IC=10mA,IB=0 IC=10µA.IE=0 IE=10µA, IC=0 VCB=50V, IE=0 VALUE MIN MAX 30 60 5V 10 10 .

2N2221 : The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218/2N2219 approved to CECC 50002100, 2N2221/2N2222 approved to CECC 50002-101 available on request. TO-39 TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (I.

2N2221 : NPN 2N2221 – 2N2221A 2N2222 – 2N2222A SWITCHING SILICON TRANSISTORS The 2N2221-A and 2N2222-A are NPN transistors mounted in TO-18 metal case . They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2221 2N2222 30 60 5 2N2221A 2N2222A 40 75 6 800 Unit VCEO VCBO VEBO IC PD Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Tamb = 25° Total Power Dissipation Tcase= 25° V V V mA W 0.5 1.8 175 -65 to +200 °C °C TJ TStg Junction Temperature Sto.

2N2221 : The CENTRAL SEMICONDUCTOR 2N2221 and 2N2222 are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC 60 30 5.0 800 500 1.2 -65 to +200 350 146 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=50V - ICBO VCB=50V, TA=150°C - IEBO VEB=3.0V - B.

2N2221 : 2N2221 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 1 – Emitter TO18 (TO206AA) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device. VCEO = 30V IC = 0.8A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 10/0.15 (VCE / IC) * Maximum Working Voltage Min. 40 Typ. 250M Max. 30 0.8 120 0.5 Units V A Hz W This is a shortform datasheet. For a full datasheet please contact sales@sem.

2N2221A : 2N2221A 2N2222A Marking Code 2N2221A 2N2222A VCEO Collector-Emitter Voltage 40 VCBO Collector-Base Voltage 75 VEBO Emitter-Base Voltage 6.0 IC Collector Current Continuous 800 Power Dissipation at TA=25°C PD Derate above 25°C 500 2.28 PD TJ ,TSTG Power Dissipation at TC=25°C Derate above 25°C Operation and Storage Junction Temperature Range 1.2 6.85 -65 to +200 Unit V V V mA mW mW/° C W mW/° C °C TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 .

2N2221A : 2N2221A, L, UA, UB & 2N2222A, L, UA, UB Radiation Hardened NPN Silicon Switching Transistors Rev. V1 Features  Qualified to MIL-PRF-19500/255  Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si)  TO-18 (TO-206AA), Surface mount UA & UB Packages Applications  Switching and Linear Applications  DC and VHF Amplifier Applications Electrical Specifications @ TA = 25°C Parameter Test Conditions Symbol Units Minimum Maximum Off Characteristics: Collector - Emitter Breakdown IC = 10 mAdc V(BR)CEO Vdc 50 — Collector - Base Cutoff Current Emitter - Base Cutoff Current VCB = 75 Vdc VCB = 60 Vdc VEB = 6.0 Vd.

2N2221A : 2N2218I A, 2N2219I A 2N2221 I A{sILiCON) 2N2222,A, 2N5581 , 2N5582 NPN SILICON ANNULAR HERMETIC TRANSISTORS . . . widely used "Industry Standard" transistors for applications as medium-speed switches and as amplifiers from audio to VHF frequencies. • DC Current Gain Specified - 1.0 to 500 mAdc • Low Collector-Emitter Saturation Voltage - VCE(sat) @ IC = 500 mAdc = 1.6 Vdc (Max) - Non-A Suffix = 1.0 Vdc (Max) - A-Suffix • High Current-Gain-Bandwidth Product - fT = 250 MHz (Min) @ IC = 20 mAdc - All Types Except = 300 MHz (Min) @ IC = 20 mAdc - 2N2219A, 2N2222A, 2N5582 • Complements to PNP 2N2904,A thru 2N2907,A • JAN/JANTX Available for all devices NPN SILICON SWITCHING AND AMPLIFIER TRANSI.

2N2221A : The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC 75 40 6.0 800 500 1.8 -65 to +200 350 97 UNITS V V V mA mW W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=60V 10 n.

2N2221A : 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES 2N2221A 2N2221AL 2N2221AUA 2N2221AUB 2N2221AUBC * * Available to JANS quality level only. 2N2222A 2N2222AL 2N2222AUA 2N2222AUB 2N2222AUBC * LEVELS JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C Operating & Storage Junction Temperature Range VCEO VCBO VEBO IC PT To.

2N2221A : SYMBOL 2N2221A,22A Collector -Emitter Voltage VCEO 40 Collector -Base Voltage VCBO 75 Emitter -Base Voltage VEBO 6.0 Collector Current Continuous IC 800 Power Dissipation @Ta=25 degC PD 500 Derate Above 25deg C 2.28 @ Tc=25 degC PD 1.2 Derate Above 25deg C 6.85 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter-Base Voltage Collector-Cut off Current SYMBOL TEST CONDITION VCEO VCBO VEBO ICBO IC=10mA,IB=0 IC=10uA.IE=0 IE=10uA, IC=0 VCB=60V, IE=0 VALUE MIN MAX 40 75 6.0 - - 10 Emitter-Cut off Current Base.

2N2221A : NPN 2N2221 – 2N2221A 2N2222 – 2N2222A SWITCHING SILICON TRANSISTORS The 2N2221-A and 2N2222-A are NPN transistors mounted in TO-18 metal case . They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2221 2N2222 30 60 5 2N2221A 2N2222A 40 75 6 800 Unit VCEO VCBO VEBO IC PD Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Tamb = 25° Total Power Dissipation Tcase= 25° V V V mA W 0.5 1.8 175 -65 to +200 °C °C TJ TStg Junction Temperature Sto.




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