Part Number
|
2N7002KG8 |
Manufacturer
|
Silikron |
Description
|
MOSFET |
Published
|
Jun 28, 2017 |
Detailed Description
|
Main Product Characteristics:
VDSS
60V
RDS(on) 7.5ohm(max.)
ID A
Features and Benefits:
Advanced trench MOSFET pr...
|
Datasheet
|
2N7002KG8
|
Overview
Main Product Characteristics:
VDSS
60V
RDS(on) 7.
5ohm(max.
)
ID A
Features and Benefits:
Advanced trench MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SOT-363
2N7002KG8
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applicati...
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