Transistor
Description:
High voltage, TO-3,
NPN, Silicon, Power
Transistor.
Designed for high voltage inverters, switching
regulators and line – operated amplifier applications.
Especially well suited for switching power supply applications in associated consumer products.
Features:
• Low Collector Emitter Saturation Voltage : VCE(sat) 1.
5V(Max.
) @ IC - 3A • Current Gain-bandwidth Product : 5MHz (Min.
) @ IC - 0.
3A
Absolute Maximum Ratings:
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Continuous Collector Current, IC Base Current IB Total Device Dissipation (TC = +25°C), PD Derate above 25°C
Operating Junction Temperature Range, TJ Sto...