Part Number
|
IRFB830 |
Manufacturer
|
JCET |
Description
|
MOSFET |
Published
|
Jul 9, 2017 |
Detailed Description
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263 Plastic-Encapsulate MOSFETS
IRFB830 MOSFET( N-Channel )
FEATU...
|
Datasheet
|
IRFB830
|
Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-263 Plastic-Encapsulate MOSFETS
IRFB830 MOSFET( N-Channel )
FEATURES .
Dynamic dv/dt Rating .
Repetitive Avalanche Rated .
Fast Switching .
Ease of Paralleling .
Simple Drive Requirement
TO-263
1.
G 2.
D 3.
S
123
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
ID @TC=25℃ ID @TC=100℃ IDM
Continuous Drain Current, VGS @ 10 V Continuous Drain Current, VGS @ 10 V Pulsed Drain Current (note 1)
PD Power Dissipation
RθJA VGS
Thermal Resistance from Junction to Ambient Gate-Souse Voltage
EAS Single Pulse Avalanche Energy (note2) IAR Avalanche Current (note 1)
EAR Repetitive Avalanche Energy (note 1)
dv/dt
Peak Diode...
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