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IRFB812PBF

International Rectifier
Part Number IRFB812PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 10, 2014
Detailed Description PD -97693 IRFB812PbF Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applic...
Datasheet PDF File IRFB812PBF PDF File

IRFB812PBF
IRFB812PBF

Overview
PD -97693 IRFB812PbF Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications HEXFET® Power MOSFET VDSS RDS(on) typ.
Trr typ.
ID 500V 1.
75Ω 75ns 3.
6A Features and Benefits • Fast body diode eliminates the need for external diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Higher Gate voltage threshold offers improved noise immunity.
TO-220AB Units A W W/°C V V/ns °C Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current ™ PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.
6mm from case ) 10lb in (1.
1N m) Max.
3.
6 2.
3 14.
4 78 0.
63 ± 20 32 -55 to + 150 e Diode Characteristics Symbol IS ISM VSD trr Qrr IRRM ton x x Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min.
Typ.
Max.
Units ––– ––– ––– ––– ––– ––– ––– ––– ––– 3.
6 A ––– 14.
4 ––– 75 94 135 220 3.
2 1.
2 110 140 200 330 4.
8 V ns nC A Conditions MOSFET symbol showing the integral reverse G S D Ù p-n junction diode.
TJ = 25°C, IS = 3.
6A, VGS = 0V TJ = 25°C, IF = 3.
6A TJ = 125°C, di/dt = 100A/μs TJ = 25°C, IS = 3.
6A, VGS = 0V TJ = 125°C, di/dt = 100A/μs TJ = 25°C f f f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes  through † are on page 2 www.
irf.
com 1 6/23/11 Free Datasheet http://www.
datasheetlist.
com/ IRFB812PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resista...


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