SILICON EPITAXIAL
PNP TRANSISTOR
2N5883
• High Voltage, Low Saturation Voltages.
• Hermetic TO3 Metal Package.
• Designed For Power Switching
and Linear Applications • Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-60V
VCEO
Collector – Emitter Voltage
-60V
VEBO
Emitter – Base Voltage
-5V
IC Continuous Collector Current
-25A
ICM Peak Collector Current
-50A
IB Base Current
-7.
5A
PD Total Power Dissipation at TC = 25°C
200W
Derate Above 25°C
1.
14W/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resist...