Part Number
|
K6R4008C1C-E |
Manufacturer
|
Samsung |
Description
|
512K x 8bit High Speed Static CMOS SRAM |
Published
|
Jul 18, 2017 |
Detailed Description
|
PRELIMINARY
K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM
Document Title
512Kx8 Bit High Speed Static RAM(5V Oper...
|
Datasheet
|
K6R4008C1C-E
|
Overview
PRELIMINARY
K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM
Document Title
512Kx8 Bit High Speed Static RAM(5V Operating).
Operated at Extended and Industrial Temperature Ranges.
Revision History
RevNo.
History
Rev.
0.
0 Initial release with Preliminary.
Rev.
1.
0
1.
1 Removed Low power Version.
1.
2 Removed Data Retention Characteristics.
1.
3 Changed ISB1 to 20mA
Rev.
2.
0
2.
1 Relax D.
C parameters.
Item 12ns
ICC 15ns 20ns
Previous 170mA 165mA 160mA
Current 195mA 190mA 185mA
2.
2 Relax Absolute Maximum Rating.
Item Voltage on Any Pin Relative to Vss
Previous -0.
5 to 7.
0
Current -0.
5 to Vcc+0.
5
Rev.
3.
0
3.
1 Delete Preliminary
3.
2 Update D.
C parameters and 10ns part.
10ns 12ns 1...
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