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K6R4008C1C-E

Part Number	K6R4008C1C-E
Manufacturer	Samsung
Description	512K x 8bit High Speed Static CMOS SRAM
Published	Jul 18, 2017
Detailed Description	PRELIMINARY K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(5V Oper...
Datasheet	K6R4008C1C-E PDF File

Overview

PRELIMINARY K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(5V Operating).
Operated at Extended and Industrial Temperature Ranges.
Revision History RevNo.
History Rev.
0.
0 Initial release with Preliminary.
Rev.
1.
0 1.
1 Removed Low power Version.
1.
2 Removed Data Retention Characteristics.
1.
3 Changed ISB1 to 20mA Rev.
2.
0 2.
1 Relax D.
C parameters.
Item 12ns ICC 15ns 20ns Previous 170mA 165mA 160mA Current 195mA 190mA 185mA 2.
2 Relax Absolute Maximum Rating.
Item Voltage on Any Pin Relative to Vss Previous -0.
5 to 7.
0 Current -0.
5 to Vcc+0.
5 Rev.
3.
0 3.
1 Delete Preliminary 3.
2 Update D.
C parameters and 10ns part.
10ns 12ns 15ns 20ns ICC - 195mA 190mA 185mA Previous Isb 70mA Isb1 20mA ICC 170mA 160mA 150mA 140mA Current Isb 60mA Isb1 10mA 3.
3 Added Extended temperature range Draft Data Feb.
12.
1999 Mar.
29.
1999 Remark Preliminary Preliminary Aug.
19.
1999 Preliminary Mar.
27.
2000 Final The attached data s...

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