SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
2N6277
• High VCEO.
• High DC Current Gain, hFE.
• Low Collector-Emitter Saturation Voltage, VCE(sat).
• Fast Switching.
• Hermetic TO3 Metal package.
• Ideally suited for Power Amplifier and Switching Applications.
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
180V
VCEO
Collector – Emitter Voltage
150V
VEBO
Emitter – Base Voltage
6V
IC Continuous Collector Current
50A
ICM Peak Collector Current
100A
IB Base Current
20A
PD Total Power Dissipation at TC = 25°C
250W
Derate Above 25°C
1.
43W/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperatu...