MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High-Power
NPN Silicon
Transistors
.
.
.
designed for use in industrial–military power amplifer and switching circuit
applications.
• High Collector Emitter Sustaining —
VCEO(sus) = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275
VCEO(sus) = 150 Vdc (Min) — 2N6277 • High DC Current Gain —
hFE = 30–120 @ IC = 20 Adc
hFE = 10 (Min) @ IC = 50 Adc • Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.
0 Vdc (Max) @ IC = 20 Adc
• Fast Switching Times @ IC 20 Adc
tr = 0.
35 µs (Max) ts = 0.
8 µs (Max)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtf = 0.
25 µs (Max) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Complement to 2N6377–79
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS(1) ÎÎÎÎÎÎÎ...