Plastic-Encapsulate
Transistors
FEATURES
• Low collector saturation voltage, • Execllent current-to-gain characteristics
2SB1386 (
PNP)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-30
VCEO
-20
VEBO
-6
IC -5
PC 0.
5 TJ 150
Tstg -55to +150
Unit
V V V A W
ELECTRICAL CHARACTERISTICS ( @ Ta=25
Parameter
Symbol
unless otherwise specified) Test conditions
Collector-base breakdown voltage
VCBO
IC=-50μA,IE=0
Collector-emitter breakdown voltage
VCEO
IC=-1mA,IB=0
Emitter-base breakd...